Support for a semiconductor structure
US11373856B2 · kind B2 · utility
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14References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 11, 2018 |
| Grant date | Jun 28, 2022 |
| Priority date | — |
| Expiry date | Jan 11, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A support for a semiconductor structure includes a base substrate, a first silicon dioxide insulating layer positioned on the base substrate and having a thickness greater than 20 nm, and a charge trapping layer having a resistivity higher than 1000 ohm·cm and a thickness greater than 5 microns positioned on the first insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.