Semiconductor substrate singulation systems and related methods
US11373859B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 29, 2020 |
| Grant date | Jun 28, 2022 |
| Priority date | — |
| Expiry date | Jan 2, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/78
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Implementations of methods of thinning a semiconductor substrate may include: providing a semiconductor substrate having a first surface and a second surface opposing the first surface, the semiconductor substrate having a thickness between the first surface and the second surface. The method may further include inducing damage into a portion of the semiconductor substrate at a first depth into the thickness forming a first damage layer, inducing damage into a portion of the semiconductor substrate at a second depth into the thickness forming a second damage layer, and applying ultrasonic energy to the semiconductor substrate. The method may include separating the semiconductor substrate into three separate thinned portions across the thickness along the first damage layer and along the second damage layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.