Methods and apparatus for integrated selective monolayer doping
US11373871B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 20, 2019 |
| Grant date | Jun 28, 2022 |
| Priority date | — |
| Expiry date | Jun 18, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/024
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus for forming doped material layers in semiconductor devices using an integrated selective monolayer doping (SMLD) process. A concentration of dopant is deposited on a material layer using the SMLD process and the concentration of dopant is then annealed to diffuse the concentration of dopant into the material layer. The SMLD process conforms the concentration of dopant to a surface of the material layer and may be performed in a single CVD chamber. The SMLD process may also be repeated to further alter the diffusion parameters of the dopant into the material layer. The SMLD process is compatible with p-type dopant species and n-type dopant species.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.