Methods to form top contact to a magnetic tunnel junction

US11374170B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Lin Xue · San Diego, US
• Jaesoo Ahn · San Jose, US
• Hsin-wei Tseng · San Jose, US
• Mahendra Pakala · San Jose, US

Key dates

• Filing date: Sep 25, 2018
• Grant date: Jun 28, 2022
• Expiry date: Sep 25, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/85

Abstract

Embodiments of the disclosure relate to methods for fabricating structures used in memory devices. More specifically, embodiments of the disclosure relate to methods for fabricating MTJ structures in memory devices. In one embodiment, the method includes forming a MTJ structure, depositing a encapsulating layer on a top and sides of the MTJ structure, depositing a dielectric material on the encapsulating layer, removing the dielectric material and the encapsulating layer disposed on the top of the MTJ structure by a chemical mechanical planarization (CMP) process to expose the top of the MTJ structure, and depositing a contact layer on the MTJ structure. The method utilizes a CMP process to expose the top of the MTJ structure instead of an etching process, which avoids damaging the MTJ structure and leads to improved electrical contact between the MTJ structure and the contact layer.