Bandgap measurements of patterned film stacks using spectroscopic metrology
US11378451B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2017 |
| Grant date | Jul 5, 2022 |
| Priority date | — |
| Expiry date | Mar 23, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2021/8883
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A spectroscopic metrology system includes a spectroscopic metrology tool and a controller. The controller generates a model of a multilayer grating including two or more layers, the model including geometric parameters indicative of a geometry of a test layer of the multilayer grating and dispersion parameters indicative of a dispersion of the test layer. The controller further receives a spectroscopic signal of a fabricated multilayer grating corresponding to the modeled multilayer grating from the spectroscopic metrology tool. The controller further determines values of the one or more parameters of the modeled multilayer grating providing a simulated spectroscopic signal corresponding to the measured spectroscopic signal within a selected tolerance. The controller further predicts a bandgap of the test layer of the fabricated multilayer grating based on the determined values of the one or more parameters of the test layer of the fabricated structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.