Patent · US Active

Selective deposition of silicon nitride

US11380539B2 · kind B2 · utility

0Cited by

1References

19Claims

0Family size

Assignee

ENTEGRIS, INC. · US

Inventors

Han Wang · Cromwell, US
Bryan C. Hendrix · Danbury, US
Eric Condo · Shelton, US
Thomas H. Baum · New Fairfield, US

Key dates

Filing date	Feb 12, 2020
Grant date	Jul 5, 2022
Priority date	—
Expiry date	Jul 18, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/02315
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Certain embodiments of the invention utilize low temperature atomic layer deposition methodology to form material containing silicon and nitrogen (e.g., silicon nitride). The atomic layer deposition uses silicon tetraiodide (SiI4) or disilicon hexaiodide (Si2I6) as one precursor and uses a nitrogen-containing material such as ammonia as another precursor. In circumstances where a selective deposition of silicon nitride is desired to be deposited over silicon dioxide, the substrate surface is first treated with ammonia plasma.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.