Patent · US Active

Method and related structure to authenticate integrated circuit with authentication film

US11380622B2 · kind B2 · utility

0Cited by
5References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 20, 2020
Grant dateJul 5, 2022
Priority date
Expiry dateNov 20, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2223/54433
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

The disclosure provides a method to authenticate an integrated circuit (IC) structure. The method may include forming a first authentication film (AF) material within the IC structure. A composition of the first AF material is different from an adjacent material within the IC structure. The method includes converting the first AF material into a void within the IC structure. Additionally, the method includes creating an authentication map of the IC structure to include a location of the void in the IC structure for authentication of the IC structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.