Magnetoresistive random access memory and method of manufacturing the same
US11387408B2 · kind B2 · utility
1Cited by
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6Claims
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Key dates
| Filing date | Dec 23, 2020 |
| Grant date | Jul 12, 2022 |
| Priority date | — |
| Expiry date | Feb 1, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
Abstract
A magnetoresistive random access memory (MRAM), including a bottom electrode layer on a substrate, a magnetic tunnel junction stack on the bottom electrode layer, and a top electrode layer on the magnetic tunnel junction stack, wherein the material of top electrode layer is titanium nitride, and the percentage of nitrogen in the titanium nitride gradually decreases from the top surface of top electrode layer to the bottom surface of top electrode layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.