Patent · US Active

Apparatuses and methods for plasma processing

US11393662B2 · kind B2 · utility

0Cited by

1References

21Claims

0Family size

Assignee

TOKYO ELECTRON LIMITED · JP

Inventors

Zhiying Chen · Shanghai, CN
Joel Blakeney · Austin, US
Megan Carruth · Austin, US
Peter Ventzek · Austin, US
Alok Ranjan · Austin, US
Kazuya Nagaseki · Yamanashi, JP

Key dates

Filing date	May 14, 2019
Grant date	Jul 19, 2022
Priority date	—
Expiry date	May 17, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2021/60165
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

A method of plasma processing comprises generating electrons in a source chamber, generating an electric potential gradient between the source chamber and a processing chamber by applying a first negative direct current (DC) voltage to the source chamber and a ground voltage to the processing chamber, accelerating the electrons from the source chamber through a dielectric injector and into the processing chamber using the electric potential gradient, and generating an electron-beam sustained plasma (ESP) in the processing chamber using the electrons from the source chamber.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.