Voltage bin boundary calibration at memory device power up
US11404124B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 16, 2020 |
| Grant date | Aug 2, 2022 |
| Priority date | — |
| Expiry date | Jan 3, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/2254
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A first current bin boundary for a first voltage bin on a first target die of a set of dies at a memory device is identified by accessing a block family metadata table including an entry for each block family of a memory device. The first current bin boundary corresponds to a first block family associated with the first voltage bin. A first bin boundary offset between the first block family and a second block family corresponding to a first new bin boundary for the first voltage bin is determined. The first bin boundary is determined based on a calibration scan performed for the first voltage bin. A first new bin boundary for the first voltage bin is determined on each die of the set of dies based on the first bin boundary offset.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.