Stacked pixel structure formed using epitaxy

US11411039B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Papo CHEN · San Jose, US
• John Boland · Scotts Valley, US
• Schubert S. Chu · San Francisco, US
• Errol Antonio C. Sanchez · Tracy, US
• Stephen Moffatt · Leatherhead, GB

Key dates

• Filing date: May 19, 2020
• Grant date: Aug 9, 2022
• Expiry date: Jul 31, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/812

Abstract

Generally, examples described herein relate to methods and processing chambers and systems for forming a stacked pixel structure using epitaxial growth processes and device structures formed thereby. In an example, a first sensor layer is epitaxially grown on a crystalline surface on a substrate. A first isolation structure is epitaxially grown on the first sensor layer. A second sensor layer is epitaxially grown on the first isolation structure. A second isolation structure is epitaxially grown on the second sensor layer. A third sensor layer is epitaxially grown on the second isolation structure.