Magnetic tunnel junction memory devices employing resonant tunneling and methods of manufacturing the same
US11411170B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 27, 2020 |
| Grant date | Aug 9, 2022 |
| Priority date | — |
| Expiry date | Oct 27, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N52/80
Abstract
A magnetoresistive memory device includes a magnetic tunnel junction including a free layer, at least two tunneling dielectric barrier layers, and at least one metallic quantum well layer. The quantum well layer leads to the resonant electron tunneling through the magnetic tunnel junction in such a way that it strongly enhances the tunneling probability for one of the magnetization states of the free layer, while this tunneling probability remains much smaller in the opposite magnetization state of the free layer. The device can be configured in a spin transfer torque device configuration, a voltage-controlled magnetic anisotropy, a voltage controlled exchange coupling device configuration, or a spin-orbit-torque device configuration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.