Patent · US Active

Method for producing a moisture sensor at the wafer level and moisture sensor

US11428661B2 · kind B2 · utility

1Cited by

1References

23Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Marco Haubold · Dresden, DE
Heiko Froehlich · Radebeul, DE
Thoralf Kautzsch · Dresden, DE
Olga Khvostikova · Dresden, DE
Marten Oldsen · Kleve, DE
Bernhard Straub · Erligheim, DE

Key dates

Filing date	Nov 22, 2019
Grant date	Aug 30, 2022
Priority date	—
Expiry date	Oct 30, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH01L23/3192
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

In accordance with an embodiment, a method for producing a moisture sensor includes providing a substrate arrangement, applying a sensor structure, applying a first cover layer on the sensor structure, locally removing the planar cover layer arrangement to expose portions of an insulation layer, applying a third cover layer on the exposed portions of the insulation layer, exposing the planar cover layer arrangement covering the sensor structure, and applying a moisture-absorbing layer element on the planar cover layer arrangement covering the sensor structure to obtain the moisture sensor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.