Deep learning based program-verify modeling and voltage estimation for memory devices
US11430530B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 25, 2021 |
| Grant date | Aug 30, 2022 |
| Priority date | — |
| Expiry date | Jan 25, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/0409
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Devices, systems and methods for improving the performance of a memory device are described. An example method includes obtaining a plurality of cell counts for each of a plurality of read voltages applied to the memory device, generating, based on the plurality of cell counts and the plurality of read voltages, at least one ones count, at least one checksum, and a plurality of samples corresponding to a distribution function of at least one read voltage of the plurality of read voltages, determining an updated value for the at least one read voltage based on an output of a deep neural network whose input comprises the at least one ones count, the at least one checksum, and the plurality of samples, and applying the updated value of the at least one read voltage to the memory device to retrieve information from the memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.