Methods and apparatus for enhancing selectivity of titanium and titanium silicides during chemical vapor deposition

US11430661B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Takashi Kuratomi · San Jose, US
• I-Cheng Chen · Taipei, TW
• Avgerinos V. Gelatos · Scotts Valley, US
• Pingyan Lei · San Jose, US
• Mei Chang · Saratoga, US
• Xianmin Tang · San Jose, US

Key dates

• Filing date: Dec 5, 2019
• Grant date: Aug 30, 2022
• Expiry date: Oct 12, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/67248
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Methods and apparatus for selectively depositing a titanium material layer atop a substrate having a silicon surface and a dielectric surface are disclosed. In embodiments an apparatus is configured for forming a remote plasma reaction between titanium tetrachloride (TiCl4), hydrogen (H2) and argon (Ar) in a region between a lid heater and a showerhead of a process chamber at a first temperature of 200 to 800 degrees Celsius; and flowing reaction products into the process chamber to selectively form a titanium material layer upon the silicon surface of the substrate.