Integrated assemblies, and methods of forming integrated assemblies

US11430809B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• S. M. Istiaque Hossain · Boise, US
• Prakash Rau Mokhna Rau · Boise, US
• Arun Kumar Dhayalan · Boise, US
• Damir Fazil · Boise, US
• Joel D. Peterson · Boise, US
• Anilkumar Chandolu · Boise, US
• Albert Fayrushin · Seojong-myeon, KR
• George Matamis · Danville, US
• Christopher J. Larsen · Boise, US
• Rokibul Islam · Meridian, US

Key dates

• Filing date: Aug 4, 2020
• Grant date: Aug 30, 2022
• Expiry date: Nov 20, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76877
• WIPO field: Computer technology
• WIPO sector: Electrical engineering

Abstract

Some embodiments include an integrated assembly having a first deck. The first deck has first memory cell levels alternating with first insulative levels. A second deck is over the first deck. The second deck has second memory cell levels alternating with second insulative levels. A cell-material-pillar passes through the first and second decks. Memory cells are along the first and second memory cell levels and include regions of the cell-material-pillar. An intermediate level is between the first and second decks. The intermediate level includes a buffer region adjacent the cell-material-pillar. The buffer region includes a composition different from the first and second insulative materials, and different from the first and second conductive regions. Some embodiments include methods of forming integrated assemblies.