Seamless gap fill
US11437271B2 · kind B2 · utility
1Cited by
5References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 5, 2020 |
| Grant date | Sep 6, 2022 |
| Priority date | — |
| Expiry date | May 5, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for filling a substrate feature with a seamless gap fill are described. Methods comprise forming a metal film a substrate surface, the sidewalls and the bottom surface of a feature, the metal film having a void located within the width of the feature; treating the metal film with a plasma; and annealing the metal film to remove the void.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.