Integrated circuit (IC) packages employing a thermal conductive package substrate with die region split, and related fabrication methods

US11437335B2 · kind B2 · utility

Assignee

• QUALCOMM Incorporated · US

Inventors

• Kuiwon Kang · San Diego, US
• Aniket PATIL · Tempe, US
• Bohan Yan · San Diego, US
• Dongming He · Gilbert, US

Key dates

• Filing date: Jul 6, 2020
• Grant date: Sep 6, 2022
• Expiry date: Jul 6, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/15311
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Integrated circuit (IC) packages employing a thermal conductive semiconductor package substrate with die region split and related fabrication methods are disclosed. The package substrate includes a die split where metal contacts in one or more dielectric layers of the package substrate underneath the IC die(s) are thicker (e.g., in a core die region) than other metal contacts (e.g., in a peripheral die region) in the dielectric layer. This facilitates higher thermal dissipation from the IC die(s) through the thicker metal contacts in the package substrate. Cross-talk shielding of the package substrate may not be sacrificed since thinner metal contacts of the package substrate that carry high speed signaling can be of lesser thickness than the thicker metal contacts that provide higher thermal dissipation. The dielectric layer in the package substrate may also include dielectric materials having different thermal conductivities to further facilitate thermal dissipation and/or desired electrical or mechanical characteristics.