Spinel containing magnetic tunnel junction and method of making the same
US11443790B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 4, 2021 |
| Grant date | Sep 13, 2022 |
| Priority date | — |
| Expiry date | Mar 12, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive memory device includes a first electrode, a second electrode that is spaced from the first electrode, and a perpendicular magnetic tunnel junction layer stack located between the first electrode and the second electrode. The perpendicular magnetic tunnel junction layer stack includes, from one side to another: a reference layer having a fixed reference magnetization direction, a first spinel layer located including a first polycrystalline spinel material having (001) texture along an axial direction that is perpendicular to an interface with the reference layer, a magnesium oxide layer including a polycrystalline magnesium oxide material having (001) texture along the axial direction, a second spinel layer including a second polycrystalline spinel material having (001) texture along the axial direction, and a ferromagnetic free layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.