Setting an initial erase voltage using feedback from previous operations
US11443812B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2020 |
| Grant date | Sep 13, 2022 |
| Priority date | — |
| Expiry date | Dec 18, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3495
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method is described that includes performing a first erase operation on a set of memory cells of a memory device using an erase voltage, which is set to a first voltage value and adjusting the erase voltage to a second voltage value based on feedback from performance of at least the first erase operation. The method further includes performing a second erase operation on the set of memory cells using the erase voltage, which is set to the second voltage value. In this configuration, the erase voltage set to the second voltage value is an initial voltage applied to the set of memory cells to perform erase operations such that each subsequent erase operation on the set of memory cells following the first erase operation uses an erase voltage that is equal to or greater than the second voltage value when erasing the first set of memory cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.