Niccolo′ Righetti
17Patents
2h-index
28Co-inventors
50Inventor score
Filing activity: Apr 29, 2014 → Jan 23, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10346088B2 | Method and apparatus for per-deck erase verify and dynamic inhibit in 3d NAND | Electricity | 8 | Active |
| US9214389B2 | Methods of forming memory arrays | Electricity | 5 | Active |
| US11301346B2 | Separate trims for buffer and snapshot | Emerging Cross-Sectional Technologies | 1 | Active |
| US11709616B2 | Adjusting a preprogram voltage based on use of a memory device | Physics | 1 | Active |
| US11443812B2 | Setting an initial erase voltage using feedback from previous operations | Physics | 1 | Active |
| US11983067B2 | Adjustment of code rate as function of memory endurance state metric | Physics | 1 | Active |
| US11288160B2 | Threshold voltage distribution adjustment for buffer | Physics | 1 | Active |
| US11430528B2 | Determining a read voltage based on a change in a read window | Physics | 0 | Active |
| US11663104B2 | Threshold voltage distribution adjustment for buffer | Physics | 0 | Active |
| US11556267B2 | Data management during a copyback operation | Physics | 0 | Active |
| US12417035B2 | Modified read counter incrementing scheme in a memory sub-system | Physics | 0 | Active |
| US11481273B2 | Partitioned memory having error detection capability | Physics | 0 | Active |
| US11392312B2 | Read calibration based on ranges of program/erase cycles | Physics | 0 | Active |
| US11468949B2 | Temperature-dependent operations in a memory device | Physics | 0 | Active |
| US9646875B2 | Methods of forming memory arrays | Electricity | 0 | Active |
| US11775208B2 | Partitions within snapshot memory for buffer and snapshot memory | Physics | 0 | Active |
| US12216915B2 | Adaptive read disturb scan | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.