Patent · US Active

Error avoidance based on voltage distribution parameters of block families

US11443830B1 · kind B1 · utility

2Cited by
3References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 30, 2021
Grant dateSep 13, 2022
Priority date
Expiry dateMar 30, 2041

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2029/0409
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A method can include receiving a request to read data from a block of a memory device coupled with a processing device, determining, using a first data structure mapping block identifiers to corresponding block family identifiers, a block family associated with the block of the memory device, determining, using a second data structure mapping block family identifiers to corresponding voltage distribution parameter values, a voltage distribution parameter value associated with the block family, determining a set of read levels associated with the voltage distribution parameter value, wherein each read level in the set of read levels corresponds to a respective voltage distribution of at least one memory cell comprised by the block of the memory device, and reading, using the determined set of read levels, data from the block of the memory device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.