Planar substrate edge contact with open volume equalization pathways and side containment

US11443975B2 · kind B2 · utility

Assignee

• Lam Research Corporation · US

Inventors

• Patrick Breiling · Portland, US
• Ramesh Chandrasekharan · Portland, US
• Karl Leeser · West Linn, US
• Paul Konkola · West Linn, US
• Adrien LaVoie · Newberg, US
• Chloe Baldasseroni · Tigard, US
• Shankar Swaminathan · Hillsboro, US
• Ishtak Karim · Portland, US
• Yukinori Sakiyama · West Linn, US
• Edmund Minshall · Sherwood, US
• Sung Je Kim · Beaverton, US
• Andrew Duvall · Portland, US
• Frank L. Pasquale · Beaverton, US

Key dates

• Filing date: Mar 31, 2020
• Grant date: Sep 13, 2022
• Expiry date: Jul 29, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/6715
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A pedestal for a substrate processing system includes a pedestal body including a substrate-facing surface. An annular band is arranged on the substrate-facing surface that is configured to support a radially outer edge of the substrate. A cavity is defined in the substrate-facing surface of the pedestal body and is located radially inside of the annular band. The cavity creates a volume between a bottom surface of the substrate and the substrate-facing surface of the pedestal body. A plurality of vents pass though the pedestal body and are in fluid communication with the cavity to equalize pressure on opposing faces of the substrate during processing.