Fully molded semiconductor structure with face mounted passives and method of making the same
US11444051B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 22, 2021 |
| Grant date | Sep 13, 2022 |
| Priority date | — |
| Expiry date | Nov 22, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/18162
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device, and method of making the same, comprising a plurality of conductive studs formed over an active surface of a semiconductor die. The plurality of conductive studs may be disposed around a device mount site, wherein the device mount site comprises conductive interconnects comprising a height less than a height of the plurality of conductive studs. An encapsulant may be disposed around the semiconductor die and the conductive studs. A portion of the conductive studs may be exposed from the encapsulant at a planar surface. A build-up interconnect structure comprising one or more layers may be disposed over and coupled to the planar surface, the conductive studs, and the conductive interconnect. A device may be coupled to the conductive interconnects of the device mount site.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.