Atomic layer etching and smoothing of refractory metals and other high surface binding energy materials
US11450513B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2019 |
| Grant date | Sep 20, 2022 |
| Priority date | — |
| Expiry date | Mar 15, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32136
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Etching a refractory metal or other high surface binding energy material on a substrate can maintain or increase the smoothness of the metal/high EO surface, in some cases produce extreme smoothing. A substrate having an exposed refractory metal/high EO surface is provided. The refractory metal/high EO surface is exposed to a modification gas to modify the surface and form a modified refractory metal/high EO surface. The modified refractory metal/high EO surface is exposed to an energetic particle to preferentially remove the modified refractory metal/high EO surface relative to an underlying unmodified refractory metal/high EO surface such that the exposed refractory metal/high EO surface after removing the modified refractory metal/high EO surface is as smooth or smoother than the substrate surface before exposing the substrate surface to the modification gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.