Selective aluminum oxide film deposition
US11450525B2 · kind B2 · utility
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14Claims
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Key dates
| Filing date | Sep 14, 2018 |
| Grant date | Sep 20, 2022 |
| Priority date | — |
| Expiry date | Jun 8, 2039 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/20
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of depositing films are described. Specifically, methods of depositing metal oxide films are described. A metal oxide film is selectively deposited on a metal layer relative to a dielectric layer by exposing a substrate to an organometallic precursor followed by exposure to an oxidant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.