Metrology method and system
US11450541B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2018 |
| Grant date | Sep 20, 2022 |
| Priority date | — |
| Expiry date | Aug 7, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A metrology method for use in determining one or more parameters of a patterned structure, the method including providing raw measured TEM image data, TEMmeas, data indicative of a TEM measurement mode, and predetermined simulated TEM image data including data indicative of one or more simulated TEM images of a structure similar to the patterned structure under measurements and a simulated weight map including weights assigned to different regions in the simulated TEM image corresponding to different features of the patterned structure, performing a fitting procedure between the raw measured TEM image data and the predetermined simulated TEM image data and determining one or more parameters of the structure from the simulated TEM image data corresponding to a best fit condition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.