Electronic device including at least one nano-object
US11450755B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 17, 2020 |
| Grant date | Sep 20, 2022 |
| Priority date | — |
| Expiry date | Nov 25, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6219
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
An electronic device is provided, including a transistor and a substrate surmounted by first through third elements, the second element being arranged between the first and the third elements and including a nano-object, a transistor channel area being formed by part of the nano-object, a first end of the nano-object being connected to the first element by a first electrode including a first part forming a first continuity of matter and a second part formed on the first part, a second end of the nano-object being connected to the third element by a second electrode including a first part forming a second continuity of matter and a second part formed on the first part, such that a lattice parameter of the second part is suited to a lattice parameter of the first part to induce a stress in the nano-object along a reference axis.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.