Semiconductor device having a transistor cell region and a termination region with needle-shaped field plate structures

US11462620B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Ralf Siemieniec · Villach, AT
• Oliver Blank · Villach, AT
• Franz Hirler · Isen, DE
• Michael Hutzler · Villach, AT
• David Laforet · Villach, AT
• Cedric Ouvrard · Villach, AT
• Li Juin Yip · Villach, AT

Key dates

• Filing date: Nov 16, 2020
• Grant date: Oct 4, 2022
• Expiry date: Jan 1, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/157

Abstract

A semiconductor device includes a semiconductor substrate, a transistor cell region formed in the semiconductor substrate and an inner termination region formed in the semiconductor substrate and devoid of transistor cells. The transistor cell region includes a gate structure extending from a first surface into the semiconductor substrate, a plurality of needle-shaped first field plate structures extending from the first surface into the semiconductor substrate, body regions of a second conductivity type, and source regions of a first conductivity type formed between the body regions and the first surface. The inner termination region surrounds the transistor cell region and includes needle-shaped second field plate structures extending from the first surface into the semiconductor substrate. The needle-shaped first field plate structures are arranged in a first pattern and the needle-shaped second field plate structures are arranged in a second pattern.