Spatial wafer processing with improved temperature uniformity

US11479855B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Joseph AuBuchon · San Jose, US
• Sanjeev Baluja · Campbell, US
• Dhritiman Subha Kashyap · Bengaluru, IN
• Jared Ahmad Lee · Santa Clara, US
• Tejas Ulavi · San Jose, US
• Michael R. Rice · Pleasanton, US

Key dates

• Filing date: Aug 25, 2020
• Grant date: Oct 25, 2022
• Expiry date: Aug 25, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/68771
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Apparatus and methods to process one or more wafers are described. A processing chamber comprises a first processing station comprising a first gas injector having a first face, a first emissivity and a first temperature, a second processing station comprising a second gas injector having a second face, a second emissivity and a second temperature, and a substrate support assembly comprising a plurality of substantially coplanar support surfaces, the substrate support assembly configured to move the support surfaces between the first processing station and the second processing station. When a wafer is on the support surfaces, a temperature skew of less than about 0.5° C. is developed upon moving the wafer between the stations in about 0.5 seconds.