Methods for forming self-aligned contacts using spin-on silicon carbide

US11482454B2 · kind B2 · utility

Assignee

• TOKYO ELECTRON LIMITED · JP

Inventors

• Junling Sun · Albany, US
• Lior Huli · Albany, US
• Andrew Metz · Albany, US
• Angelique Raley · Halfmoon, US

Key dates

• Filing date: Feb 17, 2021
• Grant date: Oct 25, 2022
• Expiry date: Apr 29, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76883
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods and improved process flows are provided herein for forming self-aligned contacts using spin-on silicon carbide (SiC). More specifically, the disclosed methods and process flows form self-aligned contacts by using spin-on SiC as a cap layer for at least one other structure, instead of depositing a SiC layer via plasma vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD), etc. The other structure may be a source and drain contact made through the use of a trench conductor. By utilizing spin-on SiC as a cap layer material, the disclosed methods and process flows avoid problems that typically occur when SiC is deposited, for example by CVD, and subsequently planarized. As such, the disclosed methods and process flows improve upon conventional methods and process flows for forming self-aligned contacts by reducing defectivity and improving yield.