Stacked magnetoresistive structures and methods therefor
US11488647B2 · kind B2 · utility
2Cited by
13References
16Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 27, 2019 |
| Grant date | Nov 1, 2022 |
| Priority date | — |
| Expiry date | Jun 27, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5622
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Aspects of the present disclosure are directed to magnetic tunnel junction (MTJ) structures comprising multiple MTJ bits connected in series. For example, a magnetic tunnel junction (MTJ) stack according to the present disclosure may include at least a first MTJ bit and a second MTJ bit stacked above the first MTJ bit, and a resistance state of the MTJ stack may be read by passing a single read current through both the first MTJ bit and the second MTJ bit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.