Semiconductor device package having thermally conductive layers for heat dissipation
US11488883B1 · kind B1 · utility
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20Claims
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Key dates
| Filing date | Apr 13, 2021 |
| Grant date | Nov 1, 2022 |
| Priority date | — |
| Expiry date | Apr 13, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device package includes a substrate, a heat-generating component positioned on a surface of the substrate, and an encapsulant at least partially covering the heat-generating component and having an outer surface. A first heat-conducting layer is disposed between the encapsulant and the first heat-generating component. One or more pillars are in contact with the first heat-conducting layer and extend to the outer surface of the encapsulant and contact a second heat-conducting layer disposed on the outer surface of the encapsulant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.