Substrate processing method and substrate processing apparatus
US11501976B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 19, 2021 |
| Grant date | Nov 15, 2022 |
| Priority date | — |
| Expiry date | Feb 19, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31138
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate processing method performed in a chamber of a substrate processing apparatus is provided. The chamber includes a substrate support, an upper electrode, and a gas supply port. The substrate processing method includes (a) providing the substrate on the substrate support; (b) supplying a first processing gas into the chamber; (c) continuously supplying an RF signal into the chamber while continuously supplying a negative DC voltage to the upper electrode, to generate plasma from the first processing gas in the chamber; and (d) supplying a pulsed RF signal while continuously supplying the negative DC voltage to the upper electrode, to generate plasma from the first processing gas in the chamber. The process further includes repeating alternately repeating the steps (c) and (d), and a time for performing the step (c) once is 30 second or shorter.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.