Methods for forming films on substrates

US11505863B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Alexander Lerner · Carmiel, IL
• Roey Shaviv · Palo Alto, US
• Prashanth Kothnur · San Jose, US
• Satish Radhakrishnan · San Jose, US
• Xiaozhou Che · Sunnyvale, US

Key dates

• Filing date: Apr 21, 2020
• Grant date: Nov 22, 2022
• Expiry date: May 30, 2040

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23C16/52
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Methods and systems for forming films on substrates in semiconductor processes are disclosed. The method includes providing different materials each contained in separate ampoules. Material is flowed from each ampoule into a separate portion of a showerhead contained within a process chamber via a heated gas line. From the showerhead, each material is flowed on to a substrate that sits on the surface of a rotating pedestal. Controlling the mass flow rate out of the showerhead and the rotation rate of the pedestal helps result in films with desirable material domain sizes to be deposited on the substrate.