Patent · US Active

Non-volatile memory system using strap cells in source line pull down circuits

US11508442B2 · kind B2 · utility

0Cited by

2References

14Claims

0Family size

Assignee

Silicon Storage Technology, Inc. · US

Inventors

Leo Xing · Shanghai, CN
Chunming Wang · Nanhu, CN
Xian Liu · Sunnyvale, US
Nhan Do · Saratoga, US
Guangming Lin · Shanghai, CN
Yaohua Zhu · Shanghai, CN

Key dates

Filing date	Oct 19, 2020
Grant date	Nov 22, 2022
Priority date	—
Expiry date	Oct 19, 2040

Classification

Technology area (CPC G)Physics
CPC primaryG11C2216/04
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

The present invention relates to a flash memory device that uses strap cells in a memory array of non-volatile memory cells as source line pull down circuits. In one embodiment, the strap cells are erase gate strap cells. In another embodiment, the strap cells are source line strap cells. In another embodiment, the strap cells are control gate strap cells. In another embodiment, the strap cells are word line strap cells.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.