Packages with thick RDLs and thin RDLs stacked alternatingly
US11508665B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 23, 2020 |
| Grant date | Nov 22, 2022 |
| Priority date | — |
| Expiry date | Jun 23, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes forming a plurality of dielectric layers, which processes include forming a first plurality of dielectric layers having first thicknesses, and forming a second plurality of dielectric layers having second thicknesses smaller than the first thicknesses. The first plurality of dielectric layers and the second plurality of dielectric layers are laid out alternatingly. The method further includes forming a plurality of redistribution lines connected to form a conductive path, which processes include forming a first plurality of redistribution lines, each being in one of the first plurality of dielectric layers, and forming a second plurality of redistribution lines, each being in one of the second plurality of dielectric layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.