Semiconductor device and method for fabricating the same
US11508904B2 · kind B2 · utility
1Cited by
1References
9Claims
0Family size
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Key dates
| Filing date | May 5, 2021 |
| Grant date | Nov 22, 2022 |
| Priority date | — |
| Expiry date | May 5, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for fabricating semiconductor device includes the steps of: forming a first magnetic tunneling junction (MTJ) on a substrate; forming a first liner on the MTJ; forming a second liner on the first liner; forming an inter-metal dielectric (IMD) layer on the MTJ, and forming a metal interconnection in the IMD layer, the second liner, and the first liner to electrically connect the MTJ. Preferably, the first liner and the second liner are made of different materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.