Radiation shield modification for improving substrate temperature uniformity

US11515129B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Elizabeth Neville · Palo Alto, US
• Satish Radhakrishnan · San Jose, US
• Kartik Shah · Saratoga, US
• Vinay Prabhakar · Cupertino, US
• Venkata Sharat Chandra Parimi · Sunnyvale, US
• Sungwon Ha · Palo Alto, US

Key dates

• Filing date: Dec 3, 2019
• Grant date: Nov 29, 2022
• Expiry date: Dec 3, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/68785
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An example semiconductor processing system may include a chamber body having sidewalls and a base. The processing system may also include a substrate support extending through the base of the chamber body. The substrate support may include a support platen configured to support a semiconductor substrate, and a shaft coupled with the support platen. The processing system may further include a plate coupled with the shaft of the substrate support. The plate may have an emissivity greater than 0.5. In some embodiments, the plate may include a radiation shied disposed proximate the support platen. In some embodiments, the plate may include a pumping plate disposed proximate the base of the chamber body. In some embodiments, the emissivity of the plate may range between about 0.5 and about 0.95.