Block-dependent cell source bounce impact reduction in non-volatile memory
US11521675B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2021 |
| Grant date | Dec 6, 2022 |
| Priority date | — |
| Expiry date | Jun 16, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A data storage system includes a storage medium coupled to a storage controller via an electrical interface connected to a plurality of input/output (IO) pads of the storage medium. The storage medium receives a read or write instruction from the storage controller via the IO pads, associates the read or write instruction with memory cells of a first block of a first plane of a plurality of planes of the storage medium, and adjusts a word line voltage level or a source line voltage level for the first block of the first plane based on (i) a position of the first plane with respect to the IO pads of the storage medium and (ii) a position of the first block within the first plane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.