Ohwon Kwon
19Patents
2h-index
34Co-inventors
46Inventor score
Filing activity: May 11, 2016 → Jul 3, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10839915B1 | Bitline boost for nonvolatile memory | Physics | 6 | Active |
| US10971209B1 | VHSA-VDDSA generator merging scheme | Physics | 2 | Active |
| US10984877B1 | Multi BLCS for multi-state verify and multi-level QPW | Physics | 2 | Active |
| US11139022B1 | Source line voltage control for NAND memory | Physics | 2 | Active |
| US10255978B2 | Loop control strobe skew | Physics | 1 | Active |
| US9959915B2 | Voltage generator to compensate for process corner and temperature variations | Electricity | 1 | Active |
| US11222694B1 | Reference current generator control scheme for sense amplifier in NAND design | Physics | 1 | Active |
| US11139018B1 | Memory device with temporary kickdown of source voltage before sensing | Physics | 1 | Active |
| US11521675B1 | Block-dependent cell source bounce impact reduction in non-volatile memory | Electricity | 1 | Active |
| US12361984B2 | Noise reduction in sense amplifiers for non-volatile memory | Physics | 0 | Active |
| US11881266B2 | Neighbor bit line coupling enhanced gate-induced drain leakage erase for memory apparatus with on-pitch semi-circle drain side select gate technology | Electricity | 0 | Active |
| US11978516B2 | Dynamic sense amplifier supply voltage for power and die size reduction | Electricity | 0 | Active |
| US12243593B2 | Low power read method and a memory device capable thereof | Physics | 0 | Active |
| US11699502B2 | Simulating memory cell sensing for testing sensing circuitry | Electricity | 0 | Active |
| US11651800B2 | Sense amplifier mapping and control scheme for non-volatile memory | Physics | 0 | Active |
| US11798638B2 | Mitigating neighbor interference to select gates in 3D memory | Electricity | 0 | Active |
| US11935585B2 | Pseudo multi-plane read methods and apparatus for non-volatile memory devices | Physics | 0 | Active |
| US11837296B2 | Non-volatile memory with adjusted bit line voltage during verify | Electricity | 0 | Active |
| US12357754B2 | Thermal flow meter for electric drug injection pump and method for measuring flow using same | Human Necessities | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.