Patent · US Active

Temperature compensation in an analog memory array by changing a threshold voltage of a selected memory cell in the array

US11521682B2 · kind B2 · utility

1Cited by
8References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 11, 2020
Grant dateDec 6, 2022
Priority date
Expiry dateNov 11, 2040

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2216/04
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

Numerous embodiments are disclosed for providing temperature compensation in an analog memory array. A method and related system are disclosed for compensating for temperature changes in an array of memory cells by measuring an operating temperature within the array of memory cells and changing a threshold voltage of a selected memory cell in the array of memory cells to compensate for a change in the operating temperature.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.