Selectively etching for nanowires
US11521860B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2019 |
| Grant date | Dec 6, 2022 |
| Priority date | — |
| Expiry date | Oct 9, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/43
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for selectively etching layers of a first material with respect to layers of a second material in a stack is provided. The layers of the first material are partially etched with respect to the layers of the second material. A deposition layer is selectively deposited on the stack, wherein portions of the deposition layer covering the layers of the second material are thicker than portions covering the layers of the first material, the selective depositing comprising providing a first reactant, purging some of the first reactant, wherein some undeposited first reactant is not purged, and providing a second reactant, wherein the undeposited first reactant combines with the second reactant and selectively deposits on the layers of the second material with respect to the layers of the first material. The layers of the first material are selectively etched with respect to the layers of the second material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.