Storage device and storage unit with a chalcogen element
US11522132B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2018 |
| Grant date | Dec 6, 2022 |
| Priority date | — |
| Expiry date | Apr 12, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/70
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A storage device includes a first electrode, a second electrode, and a storage layer. The second electrode is disposed to oppose the first electrode. The storage layer is provided between the first electrode and the second electrode, and includes one or more chalcogen elements selected from tellurium (Te), selenium (Se), and sulfur (S), transition metal, and oxygen. The storage layer has a non-linear resistance characteristic, and the storage layer is caused to be in a low-resistance state by setting an application voltage to be equal to or higher than a predetermined threshold voltage and is caused to be in a high-resistance state by setting the application voltage to be lower than the predetermined threshold voltage to thereby have a rectification characteristic.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.