Hybrid bonding contact structure of three-dimensional memory device

US11527547B2 · kind B2 · utility

Assignee

• YANGTZE MEMORY TECHNOLOGIES CO., LTD. · CN

Inventors

• Zhenyu Lu · Hubei, CN
• Simon Shi-Ning Yang · Portland, US
• Feng Pan · Kunshan, CN
• Steve Weiyi Yang · Hubei, CN
• Jun Chen · Hubei, CN
• Guanping Wu · Hubei, CN
• Wenguang Shi · Milpitas, US
• Weihua Cheng · Hubei, CN

Key dates

• Filing date: Jan 13, 2021
• Grant date: Dec 13, 2022
• Expiry date: Jan 13, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2224/80896
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Embodiments of through array contact structures of a 3D memory device and fabricating method thereof are disclosed. The memory device includes an alternating layer stack disposed on a first substrate. The alternating layer stack includes a first region including an alternating dielectric stack, and a second region including an alternating conductor/dielectric stack. The memory device further comprises a barrier structure including two parallel barrier walls extending vertically through the alternating layer stack and laterally along a word line direction to laterally separate the first region from the second region. The memory device further comprises a plurality of through array contacts in the first region, each through array contact extending vertically through the alternating dielectric stack.