Integrated assemblies having polycrystalline first semiconductor material adjacent conductively-doped second semiconductor material

US11527620B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Kamal M. Karda · Boise, US
• Deepak Chandra Pandey · Boise, US
• Haitao Liu · Boise, US
• Richard J. Hill · Boise, US
• Guangyu Huang · Boise, US
• Yunfei Gao · Boise, US
• Ramanathan Gandhi · Boise, US
• Scott E. Sills · Boise, US

Key dates

• Filing date: May 11, 2021
• Grant date: Dec 13, 2022
• Expiry date: May 20, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/854

Abstract

Some embodiments include an integrated assembly having a polycrystalline first semiconductor material, and having a second semiconductor material directly adjacent to the polycrystalline first semiconductor material. The second semiconductor material is of a different composition than the polycrystalline first semiconductor material. A conductivity-enhancing dopant is within the second semiconductor material. The conductivity-enhancing dopant is a neutral-type dopant relative to the polycrystalline first semiconductor material. An electrical gate is adjacent to a region of the polycrystalline first semiconductor material and is configured to induce an electric field within said region of the polycrystalline first semiconductor material. The gate is not adjacent to the second semiconductor material.