MTJ device performance by controlling device shape
US11527711B2 · kind B2 · utility
1Cited by
2References
20Claims
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Key dates
| Filing date | Mar 8, 2021 |
| Grant date | Dec 13, 2022 |
| Priority date | — |
| Expiry date | Mar 8, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A layered thin film device, such as a MTJ (Magnetic Tunnel Junction) device can be customized in shape by sequentially forming its successive layers over a symmetrically curved electrode. By initially shaping the electrode to have a concave or convex surface, the sequentially formed layers conform to that shape and acquire it and are subject to stresses that cause various crystal defects to migrate away from the axis of symmetry, leaving the region immediately surrounding the axis of symmetry relatively defect free. The resulting stack can then be patterned to leave only the region that is relatively defect free.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.