Patent · US Active

System and method for optimizing a lithography exposure process

US11531279B2 · kind B2 · utility

0Cited by
34References
15Claims
0Family size

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Key dates

Filing dateAug 20, 2021
Grant dateDec 20, 2022
Priority date
Expiry dateAug 20, 2041

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F9/7003
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A method for correcting misalignments is provided. An alignment for each device of a group of devices mounted on a substrate is determined. An alignment error for the group of devices mounted on the substrate is determined based on the respective alignment for each device. One or more correction factors are calculated based on the alignment error. The alignment error is corrected based on the one or more correction factors.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.