Systems and methods for depositing high density and high tensile stress films
US11538677B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Sep 1, 2020 |
| Grant date | Dec 27, 2022 |
| Priority date | — |
| Expiry date | Feb 11, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Exemplary methods of semiconductor processing may include flowing a silicon-containing precursor, a nitrogen-containing precursor, and diatomic hydrogen into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may also include forming a plasma of the silicon-containing precursor, the nitrogen-containing precursor, and the diatomic hydrogen. The plasma may be formed at a frequency above 15 MHz. The methods may also include depositing a silicon nitride material on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.