Patent · US Active

Semiconductor device including an electrical contact with a metal layer arranged thereon

US11552048B2 · kind B2 · utility

0Cited by

4References

17Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Oliver Hellmund · Straubing, DE
Barbara Eichinger · Villach, AT
Thorsten Meyer · Regensburg, DE
Ingo Muri · Villach, AT

Key dates

Filing date	Nov 23, 2020
Grant date	Jan 10, 2023
Priority date	—
Expiry date	Apr 27, 2041

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2224/97
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a semiconductor die, an electrical contact arranged on a surface of the semiconductor die, and a metal layer arranged on the electrical contact, wherein the metal layer includes a singulated part of at least one of a metal foil, a metal sheet, a metal leadframe, or a metal plate. When viewed in a direction perpendicular to the surface of the semiconductor die, a footprint of the electrical contact and a footprint of the metal layer are substantially congruent.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.